• Tayeb Mohammed-Brahim, University of Rennes 1, France, Southeast University, China
• Wei Lei, Southeast University, China
• Takashi NOGUCHI, University of the Ryukyus, Japan
• Qingxia Ling, Fudan University, China
• Zhiwei Zhao, Southeast University, China
• Suhaidi Shafie, Universiti Putra Malaysia, Malaysia
• Fei Yuan, Ryerson University, Canada
• Frank Werner, Otto-von-Guericke-Universität Magdeburg, Germany
• Min Xu, East China Normal University, China
• Yang Gao, East China University of Science and Technology, China
• Jun Wu,Southeast University,China
• Xinpeng Xing, Tsinghua University, China
• Young Suh Song, Korea Military Academy, Republic of Korea
• Damir Vrancic, Jozef Stefan Institute, Slovenia
• P. Balasubramanian, Nanyang Technological University, Singapore
• Damian C Onwudiwe, North West University, South Africa
• Rosa Letizia, Lancaster University, UK
• Taweesak Samanchuen, Mahidol University, Thailand
• Siwan Dong, Xi'an University of Posts and Telecommunications, China
• Xin Xin, Xi'an University of Posts and Telecommunications, China
• Khaled Saoud, Virginia Commonwealth University, Qatar
• Maria Helena Fino, Universidade Nova de Lisboa, Portugal
• Adriana Del Carmen Téllez-Anguiano, Instituto Tecnológico de Morelia, Mexico
• Hongfei Liu, Institute of Materials Research and Engineering, Singapore
• Moaaz Ahmed, Hamad Bin Khalifa University, Qatar
• Kangkang Sun, Politecnico di Milano, Italy
• Husam Kareem, Budapest University of Technology and Economics, Hungary
• Francesco Rundo, STMicroelectronics - ADG Central R&D, Italy
• Atiq Ur Rehman, Hamad Bin Khalifa University (HBKU), Qata
• Ning Zhang, Radiawave Technologies, China