Prof. Takashi NOGUCHI, University of the Ryukyus, Japan
Speech Title: Laser Annealing for Semiconductor Devices
Abstract: Effective laser annealing (LA) of semiconductor for TFTs on panel and for MOS devices in LSI are presented. By performing LA such as excimer laser annealing (ELA) by pulse scanning and blue laser diodes annealing (BLDA) by CW scanning is effective to crystallize as well as activate the dopants in Si films for high performance TFTs on panels for FPDs as low temperature poly Si (LTPS) process. Also, lateral laser crystallization from the bulk-crystal seed enables to realize SOI-like TFTs of 3D integration. Additionally, vertical uniform channel formation toward vertical direction is realized using LA for power devices in LSI application. Such high power or high energy LA techniques for semiconductor process are expected to produce attractive new device applications.
Biography: Takashi Noguchi received M.S. degree in 1979 and Ph.D. in 1992 from Doshisha University. In 1979, he joined Sony Corp., and contributed in R&D on Si MOS LSIs as well as Si TFTs (LTPS). In1994, he stayed in MIT as a visiting scientist. In 1998, he managed a research on novel Si devices in Sony Research Center. In 2001, he moved to France as a research scientist of CNRS in Universite Paris-Sud. In 2002, he moved to Korea and he managed two research projects as an executive member in SAIT, and also contributed in SungKyunKwan University. After 2006, he has contributed as a professor in University of the Ryukyus in Japan. After April 2019, he is a professor emeritus in Univ. of the Ryukyus.
Assoc. Prof. Taizoh SADOH, Kyushu University, Japan
Speech Title: Low-Temperature Crystallization of Group-IV Semiconductors on Insulator for Advanced Electronics
Abstract: Group-IV semiconductors, such as germanium (Ge), are promising materials for realization of next-generation large-scale integrated circuits (LSIs) and displays, because they have high carrier mobility and superior optical properties compared with Si. To integrate Ge-based high-speed transistors and high-efficiency optical devices on LSIs and displays, development of formation techniques of Ge-based films on insulators at low-temperatures (≤500°C) is essential. Thus, various techniques, such as solid-phase crystallization (SPC), metal-induced lateral crystallization, metal-induced layer-exchange crystallization, and laser annealing, have been developed.
Among them, SPC has advantage of the simple process. For development of fully-depleted devices, the thickness of semiconductor films should be decreased below ~50 nm. However, mobility in Sn-doped Ge films (thickness: ≤ ~120 nm) is deteriorated by defects near the insulating substrates. To improve the mobility in thin (≤ ~120 nm) films, defects near the insulating substrates should be eliminated. In line with this, we have developed a SPC processes combined with interface modulation. By this technique, carrier mobility is significantly increased to 200−300 cm2/Vs even for ultrathin-films (thickness: 30−50 nm).
 M. Miyao and T. Sadoh, Jpn. J. Appl. Phys. 56, 05DA06 (2017).
 C. Xu, X. Gong, M. Miyao, and T. Sadoh, Appl. Phys. Lett. 115, 042101 (2019).
Biography: Taizoh SADOH received the B. Eng., M. Eng., and D. Eng. degrees in Electrical Engineering from Kyushu University, Japan, in 1990, 1992, and 1995, respectively. His doctor thesis involved the study on characterization of micro-defects related to metals, hydrogen, and ion-irradiation in Si crystals. He became an academic staff of Kyushu University in 1995. Since 1999, he has been working on the research on semiconductor processing for advanced LSIs and displays. Especially, he is interested in solid-phase crystallization and catalyst-induced crystallization of group IV semiconductors, such as SiGe, Ge, and GeSn, on insulators at low temperatures. He is currently an Associate Professor of Department of Electronics, Kyushu University. He is a member of the Japan Society of Applied Physics, IEICE, IEEJ, IEEE, and Electrochemical Society.