Prof. Dr. Arokia Nathan, IEEE Fellow&IET Fellow, Cambridge University, UK
Arokia Nathan holds the Sumitomo/STS Chair of Nanotechnology at the London Centre for Nanotechnology, University College London. He is also the CTO of Ignis Innovation Inc., Waterloo, Canada, a company he founded to commercialize technology on thin film silicon backplanes on rigid and flexible substrates for large area electronics. He received his PhD in Electrical Engineering from the University of Alberta, Edmonton, Alberta, Canada, in 1988. In 1987, he joined LSI Logic Corp., Santa Clara, CA where he worked on advanced multi-chip packaging techniques and related issues. Subsequently, he was at the Institute of Quantum Electronics, ETH Zürich, Switzerland. In 1989, he joined the Department of Electrical and Computer Engineering, University of Waterloo. In 1995, he was a Visiting Professor at the Physical Electronics Laboratory, ETH Zürich. In 1997 he held the DALSA/NSERC Industrial Research Chair in sensor technology, and was a recipient of the 2001 Natural Sciences and Engineering Research Council E.W.R. Steacie Fellowship. In 2004 he was awarded the Canada Research Chair in nano-scale flexible circuits. In 2005/2006, he was a Visiting Professor in the Engineering Department, University of Cambridge, UK, and later in 2006, he joined the London Centre for Nanotechnology and is a recipient of the Royal Society Wolfson Research Merit Award . He has published extensively in the field of sensor technology and CAD, and thin film transistor electronics, and has over 40 patents filed/awarded. He is a co-author of two books, Microtransducer CAD and CCD Image Sensors in Deep-Ultraviolet, both published by Springer in 1999 and 2005, respectively, and serves on technical committees and editorial boards at various capacities. He is a Chartered Engineering (UK), Fellow of the Institution of Engineering and Technology (UK), Fellow of IEEE (USA), and an IEEE/EDS Distinguished Lecturer.
Abstract: coming soon...
Prof. Jin Jang, Kyung Hee Univesity, Korea
Dr. Jang serves as the Director of the Advanced Display Research Center at Kyung Hee University in Dongjak-gu, Seoul, Korea. He actively pursues display research, publishing 20 to 30 SCI-level papers each year and conducting joint research projects with researchers in the US and UK as well as sharing his research findings via international conferences and special lectures.
He is credited with establishing the world’s first Department of Information Display at a major university, and is the recipient of numerous academic and industry awards including the Academic Award from the Korean Vacuum Society, the IEEE George E. Smith award, and the Sottow Owaki Prize from the Society for Information Display(SID) for outstanding contributions to the education and training of students and professionals in the field of information display. Dr. Jang was named an SID Fellow in 2006. Dr. Jang received a BS in Physics at Seoul National University and his PhD in Physics from the Korea Advanced Institute of Science and Technology (KAIST).
Abstract: There is of increasing interest for thin-film transistor (TFT) which can be a basic device for displays and sensors. A big advantage of TFT is that it can be manufactured on any substrate including flexible and stretchable ones. For example, the substrate for display changes from glass to polyimide, and the glass which was used for display manufacturing for many tens of years will change into plastic within in 10 years. I will discuss the display and sensor applications of TFTs and will presents the recent results we have developed for sensor and flexible displays. Finally, I will discuss the future prospect of TFT applications on plastic substrates.
Prof. Massimo Poncino, IEEE Fellow, Politecnico di Torino, Italy
Massimo Poncino is Full Professor of Computer Engineering at Politecnico di Torino.
His research interests include the design automation of digital systems, with special emphasis on low-power embedded systems, modeling and the simulation of digital systems.
He has coauthored more than 350 publications in the above areas. Many of these publications are relative to the results of industry-oriented funded research projects, including collaborations with various companies from the ICT, semiconductor, and automotive domain. Since 1999, Massimo Poncino has been involved, as a technical manager or coordinator of more than 30 of EC-funded projects.
Massimo Poncino has served as member of Technical Program Committee of many international IEEE and ACM conferences, and also served as a reviewer for a number of journal and conferences of the IEEE and ACM. He was the Technical Program Chair of the 2011 IEEE/ACM Symposium on Low-Power Electronics and Design and General co-Chair for the 2012 IEEE/ACM Symposium on Low-Power Electronics and Design. He has served in the Editorial Board of several international journals and is currently serving in the Editorial Board of IEEE Design & Test and ACM Transactions on Design Automation of Electronic Systems (TODAES).
Massimo Poncino is a Fellow of the IEEE, member of the ACM SIGDA Low-Power Technical Committee, and a Member the Circuit and Systems Society.
The main constraint of most personal consumer electronic devices is not computational power, but rather their energy consumption. The potentiality of these devices could be even pushed further, if it were not to the stringent constraints imposed by batteries.
In the last 20 years there has been a continuous effort in reducing the power demand of those devices: state-of-the-art components have reached impressive energy efficiency figures. However, focusing on how the available energy is consumed is only one part of the picture; Many consumer devices are battery-operated, and the way this inite amount of energy is extracted from the battery, distributed, and converted is an often overlooked issue.
In this talk we will show how focusing only one how the energy is consumed will severely underestimate the actual usability of consumer devices, and propose solutions for a smart management of energy by carefully analyzing also its storage, distribution, and conversion.
Prof. Byung Seong Bae, Hoseo University, Korea
Abstract: coming soon...
Prof. Mamoru Furuta, Kochi University of Technology, Japan
Mamoru Furuta is a Professor at Department of Environmental Science and Engineering of Kochi University of Technology, Japan. His current research interests are metal oxide semiconductors for TFTs and their application to imaging devices. In 1988-2004, he worked in the Central Research Laboratory of Panasonic, and Toshiba Matsushita Display Technology Co., Ltd. He had wide variety of job experiences in company not only the R&D but also a mass production including a start up of the polycrystalline silicon (LTPS) TFT factory in Singapore. Since 2005, he joined Kochi University of Technology, and has been working on the research of metal oxide semiconductors for TFT. In 2006, he demonstrated a pioneering work of the metal oxide TFT which was the worlds’ first LCD driven by ZnO TFT at the conference of the Society for Information Display (SID’06) which was held at San Francisco, USA. He received the Distinguished Paper Award from the SID in 2006, the Outstanding Poster Award from the International Display Workshop (IDW) in 2006, 2013 and 2016, and the Niwa-Takayanagi Paper Award from the Institute of Image Information and Television Engineers (ITE, Japan) in 2011. He is a member of editorial board of Applied Physics Express (APEX) and Japanese Journal of Applied Physics (JJAP), Japan Society of Applied Physics, and a senior member of the IEEE.
Abstract: An In–Ga–ZnO thin-film transistor (IGZO TFT) with a heterojunction channel was demonstrated to enhance field effect mobility (mFE) and positive bias stress stability (PBTS). For achieving a hetero-junction channel, a stacked film of high-In composition IGZO layer (IGZO-high-In) on typical compositions IGZO layer (IGZO-111) was employed to form the type-Ⅱ energy band diagram which possess a conduction band discontinuity (DEc) at a hetero interface. The mFE of the IGZO TFT increased to 23.7 cm2/Vs which is twice as high as a conventional IGZO TFT. Carrier transport mechanism in the heterojuction IGZO channel will be discussed based on the experimental and device simulation results.
Prof. Iftikhar Ahmad, Abbottabad University of Science and Technology, Pakistan
Abstract: coming soon...
Assoc. Prof. Suhaidi Bin Shafie, University Putra Malaysia, Malaysia
Suhaidi Shafie received the Bachelor of Engineering (Electrical and Electronics) from University of the Ryukyus, Japan in 2000. From 2000 to 2002, he was with ALPS Electric (M) Sdn. Bhd. He received the Master of Engineering (Electrical and Electronics) from Tokyo University of Agriculture and Technology, and the Doctor of Engineering (Nanovision) from Shizuoka University in 2005 and 2008, respectively. He is an Associate Professor in Universiti Putra Malaysia and the Head of Functional Devices Laboratory. Dr. Suhaidi is working in Mix Signal IC Design and Solar Energy research. His current projects include Ultra Low Power SAR ADC and High Efficiency Dye Sensitized Solar Cell. He is was the chapter chair of IEEE Circuits and Systems Malaysia Chapter and actively involves in IEEE CAS and IMS Malaysia Chapters activities.
Abstract: coming soon...